| PART |
Description |
Maker |
| 3EZ12D5 3EZ4.3D5 3EZ10D5 3EZ5.6D5 3EZ100D5 3EZ110D |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -20% tolerance.
surface mount silicon Zener diodes 硅表面贴装齐纳二极管
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -10% tolerance.
3W SILICON ZENER DIODE
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JGD[Jinan Gude Electronic Device]
济南固锝电子器件有限公司
Jinan Gude Electronic Device Co., Ltd.
娴???洪??靛??ㄤ欢??????
http://
Jinan Gude Electronic D...
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| ISL5861EVAL1 ISL5861IB ISL5861IA ISL5861 ISL58612I |
12-bit/ 3.3V/ 130/210MSPS/ CommLinkTM High Speed D/A Converter
12-bit 3.3V 130/210MSPS CommLinkTM High Speed D/A Converter
CONNECTOR ACCESSORY
12-bit, 3.3V, 130/210MSPS, CommLinkTM High Speed D/A Converter 12位，3.3伏，130/210MSPS，CommLinkTM高速D / A转换
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http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| AD9461 AD9461BSVZ AD9461-LVDS_PCB |
16-Bit, 130 MSPS A/D Converter
From old datasheet system
16-Bit, 130 MSPS IF Sampling ADC
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AD[Analog Devices]
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| ISL56292IN ISL5629EVAL1 ISL5629IN ISL5629 |
Dual 8-bit, 3.3V, 130/210MSPS, CommLink TM High Speed D/A Converter 位，3.3伏，130/210MSPSCommLink商标高速D / A转换
Dual 8-bit/ 3.3V/ 130/210MSPS/ CommLink TM High Speed D/A Converter
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Intersil, Corp.
Intersil Corporation
|
| RF1K49154 FN4143 |
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFETPower MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET
2A 60V 0.130 Ohm Dual N-Channel LittleFET Power MOSFET
From old datasheet system
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
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INTERSIL[Intersil Corporation]
|
| RF1K49093 FN3969 |
2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFETPower MOSFET
2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET⑩ Power MOSFET
From old datasheet system
2.5A 12V 0.130 Ohm Logic Level Dual P-Channel LittleFET Power MOSFET
2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET
2.5A/ 12V/ 0.130 Ohm/ Logic Level/ Dual P-Channel LittleFET Power MOSFET
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INTERSIL[Intersil Corporation]
|
| RF1K49154 |
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET?Power MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFETPower MOSFET
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| ISL5629 ISL5629/2IN |
Dual 8-bit, 3.3V, 130/210 MSPS, CommLink™ High Speed D/A Converter; Temperature Range: -40°C to 85°C; Package: 48-MQFP DUAL, PARALLEL, 8 BITS INPUT LOADING, 8-BIT DAC, PQFP48
D/A Converter, Dual, 8 Bit, 130/210MSPS, High Speed, 3.3V
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Intersil, Corp.
|
| CM520813 |
SCR/Diode POW-R-BLOK Modules 130 Amperes/800 Volts
SCR/Diode POW-R-BLOK⑩ Modules 130 Amperes/800 Volts
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POWEREX[Powerex Power Semiconductors]
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| PTF181301 PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦，1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
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INFINEON[Infineon Technologies AG]
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| RE027 |
RE027 [Updated 2/03. 9 Pages] RE027 is a low drop out (LDO) voltage regulator macrocell with a fixed 2.8V output voltage. rated for loads up to 130
A Low Drop Out (LDO) voltage regulator macrocell with a fixed 2.8V output voltage, rated for loads of up to 130 mA. A typical application is radio section supply in mobile terminals.
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Atmel
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